Gregory M. Johnson
Senior Application Development Engineer @ ZEISS Group
About
Experienced leader in defect localization for semiconductor failure analysis (FA) across 8 successful technology node qualifications, from 130 nm to 7 nm. Hands-on development of new analytical techniques with demonstrated, practical benefits for yield improvements; results documented in multiple papers in the technical literature. Knack for getting novel results out of old equipment. Recognized authority in fault isolation of electrically-active defectivity. 19 U.S. Patents in sintering, glass, and ceramic process development for electronic packaging.
United States
Poughkeepsie
Semiconductors
Failure Analysis, Semiconductors, Semiconductor Failure Analysis, Process Integration, Laser Scanning, Structure-property Relationships, Characterization, Scanning Electron Microscopy, OBIC, FIB, Materials Science, XIVA, Simulations, Nanotechnology, Semiconductor Process, POVRay, 3D graphics, Blender, R&D, Design of Experiments
Experience

Failure Analysis Engineer
Defect Localization
Preparing to chair sessions, give one paper and one tutorial at the International Symposium on Testing and Failure Analysis

Senior Member of Technical Staff
East Fishkill, NY
Coordinated small group of lab techs in localization & SEM / STEM characterization of opens / shorts for 7LP program. Hands-on use of techniques for advanced diode characterization. Maintained multiple analytical tools (preventive maintenance + training) for other lab teams. Installed 2 new analytical tools for diode leakage and sought out samples for technique development. Discovered 2 different sources of leakage; brought to SRAM design team to run splits. Fixes led to 70X reduction in leakage and refinement of TCAD model for junctions. Discovered very subtle design flaw in ground rule violation test cells for SRAM 269 cell, reducing design critical fix by 2 months. Technique Acronyms: OBIRCH, OBIC, EBIC, EBIRCH, EBAC, PEM, PVC, SEM, FIB, XIVA, nanoprobing, advanced bench testing (4145). Position formally ended in August 2018

Semiconductor Failure Analysis Engineer
Part of team bringing 14 nm SOI program with embedded DRAM (eDRAM) to qualification. Developed static techniques for rapid failure analysis of ring oscillators (RO), bringing up RO yield up to qualification standard ahead of yield of the SRAM. Performed painstaking development of OBIRCH technique for SRAM cell leakage that proved first-metal test structure existed to catch subtle yet critical finFET crystal defect otherwise showing up in SRAM test. Collaborated with analytical tool vendor to evaluate Electron Beam Induced Resistance Change analysis at vendor on reliability fail. Enabled resolution of fail to single contact, allowing quick TEM that demonstrated very subtle defect was the fail. Program met checkpoint.

Ceramic Process Development Engineer
Ceramic process development engineer, IBM Microelectronics Packaging Development lab. Named an inventor on 19 U.S. Patents in the fields of ceramic process development. Hands-on development work involved everything from melting of experimental glass formulations to auditing of raw materials suppliers' factories for process readiness. Heavy use of SEM for microstructural characterization of Aluminum nitride and glass-ceramic substrates; various powder characterization techniques.

Graduate Research Assistant
Graduate Research Assistant. Worked on Master's Thesis research involving alumina/ zirconia/ silicon carbide whisker composites. Became expert at powder characterization. Also utilized mercury porosimetry, thermogravimetric analysis, particle size measurement, rheometers, high temperature furnaces.
Education
Gregory M. Johnson's Contact Information
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