Yuzheng Wang

• Oversaw daily CD and Etest data trends to enable early detection of anomalies and ensure timely corrective actions • Led initiatives to reduce inline KEY parametric variation through primary modulator identification and subsequent accountability for Intel 18A technology node • Served as a communication bridge between integration, yield, and fab engineering teams to align priorities and rapidly resolve yield-impacting issues • Collaborated with module owners and integration engineers to define/negotiate SPEC limits, Cpk target and inline control limits • Supervised the New Product Introduction (NPI) process to ensure smooth technology transfer from test chip to HVM

• Developed CoPt/FePt electroplating procedures to fabricate thick-film L10 phase permanent magnetic materials for MEMS applications. • Optimized CoPt/FePt electroplating bath chemistry to improve the overall magnetic performance of deposited magnets. • Designed and photolithographically patterned seed layer stacks and SU-8 electroplating mold to enable thick-film electroplating. • Developed the electroplating and screen-printing procedures to fabricate CoPt/Barium ferrite/AlNiCo based electro-permanent magnets (EPM) to enable parallel control of large teams of microrobots.

EEE5405 - Microelectronic Fabrication Technologies

• Explored applicable isolation barrier materials to protect Cu from oxidation in Cu/W bimorph structure. • Researched potential reaction and diffusion at the interface of Al/SiO2 to improve the stability and mechanical properties of bimorph beam in MEMS micro-mirror.

• Synthesized high-quality Graphene film on copper substrate using Chemical Vapor Deposition (CVD) technique. • Built first low-pressure CVD and gas supply system for the lab.