Youxi Lin

- Model and simulate the high-speed directly modulated diode lasers - Model and simulate the DFB lasers coupled to Silicon Photonics circuit (100G CWDM4, 400G PAM4) - Model and simulate the c-band tunable lasers

Develop the narrowest band-gap material system (InAsSb) among group III-V alloys grown on metamorphic buffer. –Demonstrated the narrowest optical energy bandgap ever reported (0.1 eV) among group III-V ternary materials. –Updated bandgap bowing parameters of this material system from previous work 0.67 eV to 0.87 eV. –Design and build up optical system to measure carrier lifetime, diffusion length and mobility for the longwave infrared materials. Design, and fabricate long-wave infrared optoelectronics devices (LEDs, Photo-detectors, Modulators) based on bulk InAsSb. –Demonstrated the background limited performance in InAsSb based photodetector with cutoff 10 µm. –Demonstrated the fast response longwave infrared detector with cutoff 50MHz, comparable to commercial available HgCdTe based photodetector Develop and characterize ultrathin InAsSbx/InAsSby periodic ordering structures for very long wavelength (beyond 14 μm) optoelectronic devices. –Demonstrated the optical energy bandgap in short period superlattice as narrow as 67 meV. –Investigated the special optical absorption properties of the novel superlattice materials. Design and fabricate the 3-4 μm cascaded LEDs for gas sensing.