Takuma YAGI

ドイツ本社の経営ビジョンから、日本支社としての長期ビジョンの設定 ビジョンを実現するための短期から長期の具体的営業戦略の策定 営業戦略から年間予算と売上計画の作成 営業戦略を実行するための個々の社員への目標設定と振り返り 営業補助ツール（CRM）の導入 会計資本管理補助ツール（ERP）の導入 社内プロセスの効率化：（例）承認プロセスを廃止統合し、年間1000件以上の不要なメールとドキュメントを削減。 社員教育の充実化：英語を使う機会を増やすため、weeklyでの本社とのミーティングを開催。 海外送金方法の見直しによる経費削減 計画的定期輸入によるコスト削減 日本の第三者との協力関係締結による、国内自社製品の制作 主要顧客に訪問し今後の見通しと顧客の市場に関するヒアリング 市場分析を通して、自社製品にフィットするアプリケーション分野へのプロモーション、展示会、またはカタログ等の作成 学会や経営陣の集まる場所でのネットワーキングと経済、社会に関する情報収集

Project leading for Positionig Actuator/Stage with R&D enginner according to Asian customer’s specification. (Piezo, Piezo motor, Magnetic drive, DC, Stepper motor)  Find out customer’s specification from their application (vacuum, non-magnetic, load size, accuracy etc….)  Lead the project in German headquarter to develop new product according to the requirement.  Continual improvement with the Team in Headquarter based on ISO90001  Preparation and handling customer’s audit in German headquarter

I worked as technical consultant for few clients and actually I produced following things. -create GaN project business plan -introduce GaNonSi epitaxial process technology and its characterization. -participate interviews to hire GaN process team and prepare all job description beforehand. -participate a selection process for MOCVD equipment (visit MOCVD suppliers) and make decision for a company. -educate GaNonSi epitaxial technology for few companies. -create GaNonSi technical development road map for a company. -find/introduce some collaborators to develop GaN epitaxial wafer and its device

Project leading regarding GaN epitaxial process

Chief of GaN on Si production. Epitaxial growth for nitride semiconductors for FET on Si (2-8inch, mainly 6 and 8 inch) by MOCVD (1000~1200runs/year). Wafer inspection responsibility for all production wafers and its training for shift workers. MOCVD process development by DoEs. Yield and quality control by SPC chart for measurement result. Planning and performing MOCVD maintenance cycle. Planning all production process schedules including outsourcing works. Gas flow simulation for uniformity and turbulence. Wet process for wafer cleaning and parts cleaning: RCA (SC1, SC2, HF), Piranha, KOH

Epitaxial growth for GaAs, InP by MOCVD (AIXTRON) Forming AlN, Al2O3, SiN, SiO2, on Sapphire and Si by ECR-PECVD Epitaxial growth for nitride semiconductor for LED & FET on Si, Sapphire, SiC, and GaN substrate. (800~1000 runs / year) Transfering MOCVD epitaxial growth technology for OEM production and mass production. Epitaxial wafer own sales: from 600k€ to 3.2million€ in 4years. Planning all production process schedules including outsourcing works. Releasing production data package for customers. Researching and applying patents regarding to V-III semiconductors. Wet process for parts cleaning : , H3PO4, KOH, HCl Purchasing and Logistic for Gas, MO, substrate, chemicals, MOCVD parts, and customer wafer shipment according to delivery time. Organizing international exhibition to promote epitaxial wafers

"selectable THz electromagnetic wave using Photonic crystal " THz wave by photo conductive antenna have very wide wavelength. Photonic crystal has photonic band gap. It is well known if the Photonic crystal have a defect in the periodical structure, the defect mode is appeared between photonic band gap as particular wavelength. In the experience, I set time domain spectroscope to measure selectable THz electromagnetic wave. I used a Photo conductive antenna as THz generator. The Photoconductive antenna was set in Photonic crystal as a defect. For the wavelength from the defect mode, our team calculated the size of Photonic crystal by FDTD method.