Sarad Bahadur T.
Head of GaN Technology and Applications @ Siltronic AG
About
With over 13 years in the field, my journey has been marked by a steadfast commitment to advancing GaN technology. At Siltronic AG, I've refined research and development processes, contributing to groundbreaking material characterization techniques. My concurrent role at imec culminated in December 2024, further enriching my expertise. My core competencies lie in meticulously driving R&D efforts and fostering innovation that aligns with Siltronic AG's mission. Our team's dedication to excellence has positioned us at the forefront of the semiconductor industry, and I am proud to be part of a culture that values collaborative progress and technical leadership.
Germany
Bavaria
Semiconductors
Research and Development (R&D), Characterization, Gan On Silicon
Experience

Scientific Researcher
MOCVD growth and characterization of group-III nitride structures/nanstructures for efficient solar/optoelectronics applications. Lab: Fraunhofer Institute of Integrated Systems and Device Technology (IISB) Schottkystrasse 10 91058 Erlangen
Sarad Bahadur T.'s Contact Information
Phone
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