Runlai Wan

Runlai Wan

Sr. Staff Engineer @ Qualcomm

Country

United States

City

Orlando

Industry

Electrical & Electronic Manufacturing

Skill

Simulations, Matlab, Semiconductors, Nanotechnology, Design of Experiments, Electrical Engineering, C, Signal Processing, Characterization, Physics, C++, R&D, Electronics, Engineering, Thin Films, Materials Science, C++ Language, SPICE, Verilog-A

Experience

Qualcomm

Sr. Staff Engineer

Qualcomm

LinkedIn
2024-5 - Present · 2 yrs 5 mos

Austin, Texas, United States

AMD

MTS GPU Shader Subsystem Architect

AMD

LinkedIn
2022-7 - 2024-5 · 1 yr 11 mos

Orlando, Florida, United States

- Developed GPU high-performance GEMM for machine learning. - Developed GPU high-performance compute for Ray tracing. - Developed GPU SIMD architecture/micro-architecture for general-purpose computation.

AMD

MTS SIMD RTL Design Engineer

AMD

LinkedIn
2019-7 - 2022-7 · 3 yrs 1 mo

SIMD micro-architecture development for next generation GPU. SIMD design, timing/power/area optimization. GPU performance (Ray tracing) analysis on hardware emulation.

AMD

Senior ASIC/ Layout Design Engineer

AMD

LinkedIn
2017-2 - 2019-7 · 2 yrs 6 mos

Orlando, Florida Area

- Machine learning accelerator design/performance verification - GPU virtualization hardware design verification - Ray tracing hardware design/performance verification - Experienced in design/performance verification on FPGA hardware emulator - Experienced in compute shader development - GPU design verification flow development

AMD

Intern

AMD

LinkedIn
2016-6 - 2016-10 · 5 mos

Orlando, Florida Area

University of Florida

Research Assistantship

University of Florida

LinkedIn
2013-8 - 2016-5 · 2 yrs 10 mos

➢ Development of compact model for black phosphorus transistor based on MIT Virtual Source model • Developed compact model for black phosphorus (BP) transistor ranging from ballistic transport to diffusive transport, taking into consideration of BP thickness and crystal direction • Used Perl and OCEAN script to run massive device and circuit simulation with Verilog-a model ➢ Simulation of mono and few layer black phosphorus ballistic transistor base on Non-equilibrium Green Function Formalism • Wrote C++ codes to performed device simulation of Schottky barrier FETs • Constructed low energy k.p Hamiltonian of black phosphorus for the simulation • Investigated the effect of highly anisotropic band structure of phosphorene on its electrical characteristics

HHNEC

Device Modeling Engineer

HHNEC

LinkedIn
2011-7 - 2012-6 · 1 yr

Shanghai City, China

➢ Well understanding of device characteristics, fabrication, BSIM model, and Circuit Simulation. • Participated in a BiCMOS modeling project: evaluated devices electrical characteristics, extracted BSIM model parameters, and simulated devices with spice. • Participated in RF circuit design project: designed CMOS SPDT transmit/receive switch circuit, drawn layout and performed layout verification. • Device mismatch modeling, clean room experience, and familiar with integrated circuit fabrication process flow. • Skilled in measurement equipment (e.g. Agilent B1500 & HP4156).

Institute of Optoelectronic Material and Devices

Research Intern

Institute of Optoelectronic Material and Devices

2009-9 - 2010-6 · 10 mos

Fudan University

➢ Well understanding of fabrication and characterization of transparent conducting oxide (TCO) films. • Investigated the growth of highly transparent and conducting indium zinc oxide (IZO) thin films by pulsed plasma deposition (PPD), with a focus on determining the influence of composition and process parameters upon the structural, electrical and optical properties of the TCO films. • Experienced in the operation of characterization instruments like profilometer, Hall Effect measurement, spectrophotometer; good at analyzing the XRD pattern.

Education

University of Florida

University of Florida

LinkedIn

Electrical and Electronics Engineering

2013 - 2016 · 3 yrs

Receiver of Graduate School Fellowship.

Fudan University

Fudan University

LinkedIn

Materials Science

2007 - 2011 · 4 yrs

Best Graduate Award

Runlai Wan's Contact Information

Email

******@***.com

Phone

(**) *** ****

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