Louis Cheong

SiC Epi Process Management @ onsemi

Country

City

South Korea

Industry

Semiconductors

Skill

GaN, InGaN, AlGaN Epitaxy, SiC Epitaxy, MOCVD, Thin Films, Semiconductors, Manufacturing, R&D, Design of Experiments, Materials Science, Semiconductor Industry, Characterization, MOCVD epitaxy, SiC Epi, AlGaN/GaN HEMT epitaxy, GaN-on-Si epitaxy, InGaN-based LED epitaxy

Experience

SiC Epi Process Management

onsemi

2018-9 - Present · 8 yrs 1 mo

Bucheon Korea

- Set-up & Management of SiC Epi Process. - Optimize Epi Production Recipes of SiC JBS Diodes and MOSFETs. - Set-up & Management of Candela & SICA Defect Inspection Recipes. - Set-up & Management of Metrology Tools such as Hg-CV, FTIR, Flatness, TXRF etc. - Research and Development of 6- and 8-inch SiC Epi Growth Conditions and Layer Structures. - Survey of Epi Reactors & Their Consumables, Metrology Tools, SiC Substrates, Epi Growth Gases.

Research Professor

Chonnam National University

2017-9 - 2018-8 · 1 yr

Collaborative research between industry and academia

Director of GaN Epi Process Technology

Ideal Energy Equipment (Shanghai) ltd. (理想能源设备有限公司)

2011-9 - 2014-8 · 3 yrs

Shanghai

Manage GaN Epi Process Department - Develop demo- and production-level recipe of GaN-based Epi growth by IE’s MOCVD - Reached 95% of production-level GaN LED performance by 2-month optimization on 90x2 IE MOCVD - Growth of GaN-on-Si for HEMT MOCVD equipment experiences 1.AIX200RF(wafer loading 1x2) 2000.06 ~2006.12 (6.5 years) Chonbuk National University 2.Emcore SpectraBlue(wafer loading 6x2) 2003.03~2004.03 (1 year) KOPTI 3.GZ E300(wafer loading 21x2) 2007.01 ~ 2011.01 (4 years) LG innotek, Rainbow 4.Thomas swan(wafer loading 19x2) 2008.07~2010.08 (2 years) LG innotek, Rainbow 5.CRIUS(wafer loading 31x2) 2009.01~2009.08 (8 months) LG innotek 6.Aixtron G3(wafer loading 24x2) 2009.09~2011.02 (1.5years) Rainbow 7.MOCVD by JHcore(Rainbow Opt.) 2010.01~2011.01 JHcore (Rainbow) 8.MOCVD by AMEC(wafer loading 35x2) 2011.08~2011.09 AMEC 9.MOCVD by IE(wafer loading 90x2) 2011.09 ~ now. Ideal Energy Equipment

R&D Department Manager of GaN LED Epitaxy

Rainbow Optoelectronics Materials

2009-9 - 2011-2 · 1 yr 6 mos

Shanghai

- Manage GaN LED Epi R&D projects. - Work with GaN LED Epi production engineers to solve Epi production issues. - Flow simulation & Epi growth with the new MOCVD (2x180) designed by Rainbow.

GaN LED Epi Senior Engineer

LG Innotek

2007-1 - 2009-8 · 2 yrs 8 mos

Korea

- Developed a GaN LED Epi recipe with the chip yield over 90% after 3-time -2kV ESD surge. - Developed a GaN LED Epi recipe of Al-free LED epi structure with a same output power with p-AlGaN employed structure. - High power LED epi by using surface texturing and SiO2 PSS. - LED growth on Y-PSS, Nano PSS and PNS (patterned n-type GaN substrate) with 5%~ improvement of optical output power Patents (over 10 patents) 1.“Fabricating Method of Single Crystal Thin Film of Compound Semiconductor,” Hung-Seob Cheong, Cheong-Hee Hong, Application number:10-2005-0072919 (2005.08.09)-Korea patent, when in graduate school. 2.“Semiconductor, Method of manufacturing the same and Semiconductor Light-eimtting diode,” Hung-Seob Cheong, Chang-Hee Hong, Application number:10-2006-0027779 (2006.03)-Korea patent, when in graduate school. 3.“Semiconductor, Method of manufacturing the same and Semiconductor Light-eimtting diode,” Hung-Seob Cheong, Chang-Hee Hong, Application number:10-2006-0065054 (2006.07)-Korea patent, when in graduate school. 4. 5 Korea patents, when in LG 10-2007-0087903; 10-2007-0082493; 10-2008-0015174; 10-2008-0041200; 10-2008-0037444 5. 3 USA patensts, when in LG 12388986; 12434318; 12427263 6. 5 China patents, when in IE