Dr. Kwang Hong LEE (李光雄), Ph.D., MBA

• Developing and producing GaN LED epitaxy on 200 mm Si substrates using metal organic chemical vapour deposition (MOCVD). • Producing 200 mm integrated CMOS+GaN (LED or HEMT) substrates through wafer bonding. • Research and development of new wafer bonding technologies for integration of Si-CMOS and III-V compound semiconductors on common Si substrates and for fabrication of on-insulator platforms. • Working closely with external foundries to process the integrated wafers to realize the monolithic CMOS + GaN LED/HEMT integrated chips. • Establishing stable supply chains for the GaN LED and GaN HEMT wafers locally and globally. • Troubleshooting and maintaining equipment, such as wafer bonder, MOCVD, CMP, furnace, etc. • Supervising research engineers and provide guidance to fresh researchers.

• Supporting metal organic chemical vapour deposition (MOCVD) system installation and process development outside China region. • Business penetration, coordinating and conducting process demonstration and improvement of oversea accounts. • Supporting future MOCVD equipment development and process improvement. • Helping customer to troubleshoot the MOCVD equipment and process. • Providing mass production solution to customers.

• Wafer bonding for integration of Si-CMOS and III-V compound semiconductors on common Si substrates and fabrication of on-insulator platforms. • Enhance the overall bonding yield. • Growing of group IV and group III-V materials on 200 mm Si substrates using metalorganic chemical vapor deposition (MOCVD). • Troubleshooting and maintaining the equipment, e.g. MOCVD, wafer bonder, CMP, furnace etc. • A member of emergency response team (ERT). • Leading a team of four to mass produce the integrated wafers. • Manage a S$ 250,000 and a S$ 50,000 projects. • Working closely with foundries for integrated wafers to be re-entered to the foundries for backend interconnection processing. • Supervising junior researchers, engineers, technicians, Ph.D., FYP, and URECA students.

• Growing Ge on Si using metalorganic chemical vapor deposition (MOCVD). • Growing InGaAs on Ge/Si using metalorganic chemical vapor deposition (MOCVD). • Fabrication of Germanium on Insulator (GeOI) through fusion bonding. • Integration of III-V materials on 200 mm CMOS-Si substrate. • Mentoring PhD students and FYP students.

• Growing Ge on Si using metalorganic chemical vapor deposition (MOCVD). • Fabrication of Germanium on Insulator (GeOI) through fusion bonding. • Integration of III-V materials on 200 mm CMOS-Si substrate.

• Growing the In1-xGaxAsyP1-y SLED epitaxy multi-layer using MOCVD and characterized using X-Ray Diffraction (XRD) and Photoluminescence (PL). • Addressing the growth issues, such as particles, strain lines, rough surface. • Troubleshooting and maintaining the MOCVD, XRD and PL. • Preparing and revising the standard operation procedures for all the equipment and processes. • Leading a team of 3 for new product development. • Establishing new processes for SLED production. • Transferring the process of fabricating rare-earth doped preforms using Modified Chemical Vapour Deposition (MCVD) and drawing the preform into fiber from Optacore, Slovenia.

•Investigating the sensing capability of an azimuthal rotated grating coupled Surface Plasmon Resonance (SPR). Successfully enhanced the sensitivity of the configuration with one order of magnitude higher than the conventional case. •Fabricating the nanostructures using Anodization of Aluminum Oxide (AAO) template. Successfully demonstrated the fabrication of Au nanotip array with apex and base diameter of 20 nm and 200 nm respectively using the novel AAO approaches. •Collaborating with Elettra in Italy to fabricate gold nanoantennas using X-Ray Lithography. •Assisting supervisor in writing funding proposal. Successfully received an amount of SGD 50,000 from Defense Science Organization (DSO). •Contributing towards undergraduate teaching, e.g. tutorials & laboratories with a score 4 out of 5 points in the feedback. •Contributing towards Final Year Project (FYP) guidance. Successfully guided 6 FYP students with promising results.

•Studying the “Driving of Polaritons in Plasmonic Nanostructures: Amplification & Radiation Control for Sensing Purposes”. Project is being sponsored by Ministry of Education (MOE). •Successfully simulated the surface plasmon dispersion curves on rotatable grating using Mathematica.

•First Class Honors. •FYP - Worked individually to fabricate thick porous anodic alumina films and high aspect ratio of nanowire arrays on the silicon wafer. Project was sponsored by Institute of Microelectronics (IME).