Kuan-ju Chen

25+ years experience in III-V compound semiconductor material and device R&D, including InP-based material growth/characterization, laser diode and photodiode wafer sourcing, LD/PD structure design, LD/VCSEL/PIC process integration and NPI, product qualification/verification, yield improvement, life cycle management, etc... [Publication] Guan-Ru Chen, Hao-Hsiung Lin, Jyh-Shyang Wang, Ding-Kang Shih "Optical properties of InAs(1-x)N(x)/In(0.53)Ga(0.47)As single quantum wells grown by gas source molecular beam epitaxy" Journal of Electronic Materials Vol, 32, No 4, pp. 244-248, (2003). Guan-Ru Chen, Hao-Hsiung Lin, Jyh-Shyang Wang, and Ding-Kang Shih "Optical properites of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells" J. Appl. Phys. Vol. 90, No. 12, pp. 6230-6235, (2001). Jyh-Shyang Wang, Hao-Hsiung Lin, Li-Wei Song, and Guan-Ru Chen "Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy" J. Vac. Sci. Technol. B Vol.19,pp.202-206,(2001). Jyh-Shyang Wang, Hao-Hsiung Lin, Li-Wei Sung, Guan-Ru Chen "Growth and characterization of InAsN alloys" Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials, Piscataway, NJ, USA, pp.549-552, 2000. G. R. Chen, J. S. Wang, and H. H. Lin "經熱退火之砷化銦/砷化銦鎵及氮砷化銦/砷化銦鎵單量子井結構光激光譜之研究" Optics and Photonics/Taiwan'99, Chung-Li, ROC, 1999. J. S. Wang, G. R. Chen, L. W. Sonq, and H. H. Lin "以射頻電漿輔助之氣態源分子束磊晶機於砷化銦基板成長氮砷化銦薄膜及其特性分析" Optics and Photonics/Taiwan'99, Chung-Li, ROC, 1999. J. S. Wang, G. R. Chen, L. W. Sonq, and H. H. Lin "以氣態源分子束磊晶機於磷化銦基板成長氮砷化銦/磷砷化銦鎵多量子井" 1999 EDMS, Taoyuan, Taiwan, ROC, 1999.