KIYONG HONG

Micro LED Development for integration with the panel @ LG Display

About

MicroLED device and epitaxy engineer with over 20 years of experience in III–V semiconductors, specialising in both AlGaInP (As/P) and GaN material systems.Extensive expertise in red MicroLED development based on AlGaInP, including epitaxial structure design, low-current efficiency optimisation, and integration for display applications. Proven track record in building full epitaxial platforms, from MOCVD equipment installation to process development and stable mass production.Strong capability in bridging epitaxy, device physics, and process integration, with hands-on experience in RGB MicroLED architectures, hybrid pixel integration, and transfer-compatible design. Experienced in both MOCVD hardware and process engineering, enabling robust recipe design and high-yield manufacturing.Currently focused on next-generation MicroLED pixel design and system-level optimisation for advanced display applications.

Country

City

South Korea

Industry

Semiconductors

Skill

Electronics Manufacturing, Semiconductor Manufacturing, Yield Improvement, VCSEL, Laser Diode, Optoelectronics, MicroLED Display, Semiconductor Process Integration, RGB Pixel Architecture, 디스플레이 기술, Device Physics, III-V Semiconductor, MOCVD, Epitaxy, GaN, AlGaInP, MicroLED, 엔지니어링

Experience

Micro LED Development for integration with the panel

LG Display

2020-5 - Present · 6 yrs 5 mos

서울

- Leading RGB MicroLED development, including chip design, pixel architecture, and commercialization strategy - Driving epitaxy, device, and process optimisation to improve low-current efficiency, reliability, and transfer yield - Developing next-generation epitaxial structures for ultra-small pixel scaling and high-efficiency operation - Bridging epitaxy, device physics, and process integration for display-level performance optimisation

LED / Micro LED / AlGaInP / AlGaAs / GaN Epi. Development

LG Innotek

2009-5 - 2020-5 · 11 yrs 1 mo

- Built and established a full AlGaInP Red LED epitaxy production platform (MOCVD installation → process development → stable mass production) - Developed and mass-produced high-efficiency 616–630 nm Red LED epitaxial structures - Expanded epitaxy applications into IR, VCSEL, automotive, horticulture, and MicroLED - Led MOCVD capacity scaling and wafer size transition (2” → 6”) for GaN-based production systems - Enabled production stability and yield improvement through process and hardware optimisation

Red/IR Laser Diode Epi. Development

QSI

2006-1 - 2009-5 · 3 yrs 5 mos

- Developed AlGaInP/AlGaAs-based Red and IR laser diode epitaxy - Designed and optimised multi-wavelength laser structures (650 nm / 780 nm) - Built foundational expertise in III–V epitaxy and device structure design