Kevin Lee, PhD

Wide Bandgap Device and Process Development Engineer @ Texas Instruments

About

Kevin Lee, Ph.D., is a semiconductor engineering leader with over 10 years of experience in device and process development. He holds a Ph.D. in Electrical and Computer Engineering from Cornell University, with a research focus on wide-bandgap materials for optoelectronics and power electronics. At Texas Instruments, Kevin led the development of E-mode GaN HEMTs across various voltage applications. Pimary focus includes device characterization, reliability evaluation, layout design, test automation, and process optimization. Previously at TSMC, he contributed to N3 and N2 advanced CMOS technology development, including process integration in the MEOL metal CVD/PVD depositions, discovering new materials for next generation node, and improving throughput/cost efficiency. Kevin has authored 30+ peer-reviewed publications (cited 1,200+ times) and holds several patents. With his proven record of innovation, execution, and cross-functional collaboration, Kevin continues to drive advancements in next-generation semiconductor technologies that shape the future of high-performance and energy-efficient electronics.

Country

United States

City

Dallas

Industry

Semiconductors

Skill

Reliability, Data Analysis, Design of Experiments (DOE), Reliability Analysis, Spotfire, Python (Programming Language), JMP, Semiconductor Device, Research and Development (R&D), Process Integration, Thin Films, Molecular Beam Epitaxy, Chemical Vapor Deposition (CVD), Light Emitting Diodes, Photoluminescence, Atomic Force Microscope, Stabilized Frequency Laser System, Flexible Electronics, Scanning Electron Microscopy, Ultracold Atom Physics

Experience

Wide Bandgap Device and Process Development Engineer

Texas Instruments

2023-6 - Present · 3 yrs 4 mos

Dallas, TX

Medium Voltage GaN Technology Development in ATD (Advanced Technology Development) • Reliability (dynamic Ron & TDDB) • Device Designs & Characterizations • Process Integrations and Optimizations • Test Automation • Data Analysis/Database Construction

Principal Engineer - GaN Process Integrations

TSMC

2022-6 - 2023-5 · 1 yr

Hsinchu City, Taiwan

R&D GaN High Power Program for E650 Gen2 • Device characterizations • Process integration • Failure analysis • Reliability tests • Packaging

Principal Engineer - Metal Module Developments

TSMC

2020-11 - 2022-6 · 1 yr 8 mos

Hsinchu, Taiwan

R&D metal depositions at MEOL of 2nm and 3nm technology nodes in ATMD (Advanced Technology and Module Development). Primary focus: • Low resistance novel metal plugs (new materials) on EPI (CVD and PVD) • Process integration • Methodology development • Pre-clean technology • Experience in development with tool vendors (ex. AMAT, TEL, and LAM)

Doctoral Student

Cornell University

2015-8 - 2020-11 · 5 yrs 4 mos

Ithaca, New York Area

MBE Crystal Grower for III-nitrides optoelectronic and power devices Project and research fields: • Blue/Deep UV LEDs and lasers • Quantum well HEMTs on single-crystal AlN substrates (collaboration with Asahi Kasei/Crystal IS) • Intersubband infrared detector with GaN/AlN superlattice (collaboration with Prof. Rana at Cornell) • Band diagram and tunnel junction LEDs simulation and design • p-type doping in widebandgap III-nitrides materials • Experieneced with material and electronic transport characterizations (ex. AFM, SIMS, SEM, TEM, X-ray Diffraction, PL, and Hall measurements.)