Kenichi Abe
Principal Engineer @ Samsung Electronics
About
I have R&D experience in CMOS Image Sensor (CIS) including medium and long term research topics, and diverse work experience in 2D and 3D NAND flash memory design including physical verification, PDK drafting and improvement, TCAD, row drivers and column sense amplifier circuit design. Especially for NAND flash memory, I’ve been involved in all aspects of the project from the start to the transfer to mass production, including concept design, detailed design, verification, chip evaluation, and defect analysis at the start of mass production.
Japan
Tokyo
Semiconductors
SPICE (ソフトウェア), pixel, Semiconductors, Research and Development (R&D), Image Sensors, NAND Flash, Nanotechnology, Integrated Circuit Design, TCAD, Failure Analysis, Semiconductor Device, LSI
Experience

Senior Image Sensor Engineer
Huawei Technologies Japan K.K.
Tokyo, Japan
Medium- to long-term R&D work focusing on CMOS image sensors

Specialist in non-volatile memory design
Toshiba Memory Corporation
Yokohama, Kanagawa, Japan
I was in charge of the following works for the initial study of next-generation 3D NAND flash memory. 1. TEG design for cell evaluation and process examination 2. Circuit design for cell array drive system 3. Drafting of specifications for the main operation modes such as read, program, and erase of the product, and discussions with related departments
Education
Kenichi Abe's Contact Information
Phone
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