Jack Brunning
Device | Modeling - RF Semiconductor @ Octric Semiconductors Ltd
About
Radio Frequency / Microwave design & modeling Engineer specializing in the research, design, development and technical management of RF power devices in Si-LDMOS, GaN SiC & GaAs semiconductor technologies. Deep interest, with successful conceptual studies & evaluation of high power integrated broadband RF power transistors for Doherty, dual path & single ended configurations including research of alternate design techniques & technologies using a holistic approach. Capable of converting system requirements to a device prototype & line up to industrialized scale. Benefits from industry & academic research environments including past & current industry experience in UK, EU & US. Includes broad background in passive microwave design. Technical experience: • Concept study and detailed design of high power, broadband integrated RF power devices • Small signal + large signal measurement of RF devices incl. load pull • Integration, interpretation and fitting of measured data into RF device models • Development of integrated EDA design flows for RF power devices • Development of 3D package and bondwire models • T/O and measurement across a range of semiconductor technologies and foundries; GaN-SiC, Si-LDMOS, GaAs IPD • Interface with technology groups to optimize device level performances • Detailed compete analyses to drive technology development • Detailed line-up analysis of complete chain and driver/final stage dimensioning within the transmitter chain • Design of load modulated [Doherty] power amplifiers - Integrated | Inverted | Symmetrical | Asymmetrical • Design of single-ended and balanced power amplifiers • Waveform engineering for harmonically tuned PA classes • Highly proficient in using Cadence Microwave Office [Linear, HB, Axiem, Analyst] • Proficient with ADS, IVCAD, KLayout • Introduction of designs to volume production Academic experience of the following: • Authorship of published papers [IET, IEEE, ARMMS] • Authorship of invited journal technical articles [Microwave Journal] • Technical presentations & webinars for multi-disciplinary audiences in the UK & abroad • Knowledge Transfer Partnership [KTP] | High Efficiency L-Band PA project • Horizon2020 | Industry partner for high efficiency PA Architectures for 5G • Mentored Early-Stage Researchers, associates in KTP & H2020 projects • Peer review academic/conference papers • IEEE MTT-S (MTT-20) Technical Committee Member and Contributor Work Environment: • Capable of working on-site and hybrid / remote since 2020 in both established organizations & dynamic early phase start up environments
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United Kingdom
Semiconductors
RF, Microwave, Project Management, Manufacturing, Testing, Electronics, PCB design, Labview, Process Engineering, Materials Management, Antennas, Six Sigma, Simulations, GSM, Product Design, PCB Design, LabVIEW, Wireless, LTE, Hardware Architecture
Experience

Principal RF Power Transistor Design Eng. | RF Power Transistor | Device for RFPA | GaN Technology
Gallium Semiconductor
Nijmegen, Gelderland, Netherlands
Design, modelling and evaluation for a portfolio suite of high power GaN-SiC RF power devices for macro-BST in sub 6GHz telecom bands. Device design for Doherty, dual path and single ended configurations with and without internal pre-match using discrete, GaAs IPD and ACP package technologies. Part of the Gallium Semiconductor core team tasked with creating a high performing GaN technology group. • Design lead for a 400W packaged RF power device portfolio for macro-BST portfolio using a 50V GaN-SiC process node and GaAs IPD in the following bands. • 1.8-2.2GHz • 2.3-2.7GHz • 3.3-3.8GHz • 3.7-4.2GHz • Developed and integrated a complete EDA transistor design flow in Cadence MWO. • Developed 3D FEM + bondwire and package modelling for ACC, ACP and DFN packages in Cadence MWO. • Developed low power (60W) macro driver devices and linear RFPA demo. • Mentored junior team members in RFPA fundamentals, design and modelling techniques. • Alignment with external subcontractors. • Significant contributor to the establishment and development of the Nijmegen GaN R&D team.

Device and RFPA for 5G MCM | GaN Technology
Spirit Semiconductor Ltd
United Kingdom
Design, modelling and evaluation of GaN devices. Developed prototype integrated load modulated PA architectures and built knowledge base in early phase development environment. • Design, modelling, development, and evaluation of <6GHz GaN based load modulated power amplifiers. • Development of EDA modelling. • Characterization of semiconductor technologies across various process nodes. • Identification of potential IP opportunities and where appropriate, extraction of. • Contribute to competitor analysis and development of technology roadmaps. • Co-assist in the initial establishment of a Leeds based GaN team.

Principal RF Power Transistor Design Eng. | RF Power Transistor | Device for RFPA | DPA
Nijmegan, Netherlands
Design and modelling of discrete RF power devices for mobile broadband applications in sub 6GHz bands and 400 - 600W power ranges. • Design of high-power Si-LDMOS transistors for macro base-station applications in sub-bands 1.8 to 2.7GHz. • RF transistor design specifically for Doherty architectures. • S-parameter and load pull bench characterization of RF power transistors. • RF transistor modelling and measurement fitting. • Detailed line-up analysis and dimensioning for transmitter chain. • Designed concept and prototype for high power in a compact ceramic package study in 1.8 / 1.9 / 2.2 / 2.7GHz bands. Output of project suitable for high volume production and currently [2022] being released.

Horizon 2020 Industrial Partner | Power Amplifier Specialist
Leeds, United Kingdom
Provided detailed design knowledge and techniques with respect to modelling, Doherty architectures and load modulation design concepts for Horizon 2020 in house Early-Stage Researcher (ESR). Contributed as co-author to academic publications. Duties undertaken in parallel with current employment.

Senior Microwave Design Engineer | Power Amplifier Specialist
Leeds, United Kingdom
Detailed design and development of solid-state RF / Microwave power amplifiers (SSPAs) for surveillance, broadcast, military and commercial applications. • Single ended, balanced and load modulated (Doherty) solid state power amplifier design and development. • Use of Si-LDMOS and GaN-SiC transistor technologies. • Validation of transistor compact models. • Detailed line-up analysis and dimensioning for transmitter chain. • Authorship and presentation of technical feasibility studies and technology reviews.

Microwave Design Engineer | Waveguide
North Yorkshire
Design and development of waveguide components (experience up to 20GHz) for commercial, space, military and scientific applications from initial customer specification, hardware design \ EM modelling, lab development \ testing, through to product delivery. • Design of waveguide components; tees, bends, comparators, high power loads, couplers. • 3D electromagnetic modelling and simulation using CST and HFSS packages. • Test \ measurement of waveguide components and systems. • Off-site antenna testing and qualification. • Basic mechanical test fixture design including design of test adaptors. • Working within a multi-disciplinary team alongside Mechanical Engineers. • Authorship of progress \ technical reports and design reviews with customers at home and abroad.

RF Design Engineer | CATV Filters
Little Island, Cork, Ireland
Development of passive components for CATV applications. • Design and prototype of lumped element diplexers, high\low pass filters (up to 1GHz) from initial customer specification, synthesis, EM simulation and layout through to testing, qualification, data sheets and product release documentation. • Basic test fixture design for lab development and testing purposes. • Test, measurement, characterization, and qualification of filters. • Product release of designs into volume production (400K+).

RF Development Technician | WiMAX Basestation Development
Shipley, West Yorkshire, UK
Development of 2.5GHz WiMAX radio for 20W and 40W variants from initial build to pre-production low volume production runs. • Radio lab tests. • De-bug of prototypes including RF, DC and baseband stages • Characterisation of radio performance • Evaluation of transmitter and receiver chains • Generation of failure mode analysis spreadsheets for prototype rounds against module specification
Education

THz Solid State Power Amplifier Design and Fabrication.
Awarded PhD scholarship funding by University of Liverpool. Research based on THz solid state power amplifier and transistor design. Research interests include: • THz transistors • Design of efficient passive combining at THz frequencies • SSPA design at THz frequencies • Fabrication for THz technologies • Linear and non-linear measurement techniques in the THz region • Solid state physics • Microfluidic cooling
Jack Brunning's Contact Information
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