Hiroaki Goto

Led development of a new generation of actively cooled laser diode package using bonded single-crystal SiC and sintered alumina with AuSn solder. Demonstrated a 12-bar wavelength beam combining (WBC) high-brightness blue direct diode laser exceeding 1000 W, enabling commercialization of an 800 W laser source product. - Developed optimal assembly processes for SiC and alumina, including metallization, precision dicing, and AuSn eutectic soldering for high-reliability laser diode packaging. - Implemented advanced quality control with X-ray CT scanning and failure analysis using cross-sectional SEM and Raman stress analysis, enabling faster problem resolution and improved reliability. - Facilitated collaboration between Japan and U.S. teams, ensuring mutual understanding and alignment on technical milestones and deliverables.

Led development of a new generation of actively cooled laser diode package using bonded single-crystal SiC and sintered alumina with AuSn solder. Demonstrated a 12-bar wavelength beam combining (WBC) high-brightness blue direct diode laser exceeding 1000 W, enabling commercialization of an 800 W laser source product.

Led a Japan-based team in coordination with a U.S. counterpart to develop high-power near-infrared (NIR) diode laser equipment. Upon transferring to the U.S., I transitioned the project leadership to a Japanese colleague, ensuring continuity and a smooth handover of responsibilities. - Defined and managed the project scope, budget, prototype manufacturing, and evaluation schedules through qualification, along with capital investment planning, for the development of a new NIR laser equipment. - Collaborated with product planning team to translate customer needs into product specifications and partnered with U.S. R&D team to create detailed technical requirements.

Led a 10-member engineering team developing passive-cooling and active-cooling laser diode packages for highbrightness blue lasers, as part of a Ministry of the Environment, Government of Japan, funded project on advanced blue laser processing equipment development. - Managed the schedule and prototype manufacturing for blue laser diode packages, contributing to the delivery of prototype equipment delivery. - Developed a high-efficiency laser diode package structure by introducing a copper diamond submount to improve heat dissipation and establishing optimal manufacturing processes, including AuSn eutectic chip bonding.

Contributed to development of passive-cooling laser diode packages for industrial laser welding and metal cutting applications. - Led the design and implementation of manufacturing processes for the laser diode packages utilizing two-layer soldering, improving thermal performance and production reliability. - Collaborated with quality and manufacturing teams to conduct D-FMEA, P-FMEA, and lifetime testing, qualifying designs and processes for mass production.

Worked in LCD panel development for automotive, medical, and broadcast markets. Led photomask design and innovations in fault detection, narrow-bezel, and curved display technologies (4 Granted U.S. Patents). - Pioneered functional safety architecture in LCD panels by designing an on-panel fault detection circuit and demonstrating pixel-level detection during operation, contributing to the advancement of functional safety technology for automotive LCD panels. - Established a design methodology for highly reliable narrow-bezel panels with a bezel width of 3mm or less and curved display, contributing to the high-quality design of in-car LCD panels. - Eliminated recurring static electricity defects by identifying root causes and redesigning panel circuitry, improving yield and production reliability.

Specialized in InP -based semiconductor photonic device development for optical communication systems, including optical modulators, photodetectors, and laser diodes (1 Granted U.S. Patent). - Optimized the design and wafer fabrication process for optical modulators, including photolithography, dry etching, and metallization, achieving a stable and robust fabrication of high–aspect ratio vertical mesa waveguide structure and electrode on the top of the mesa. - Developed a photomask set of 20+ layers with optimized device placement and refined the photolithography process, increasing device yield per wafer by 30% and reducing material costs. - Conducted high-temperature, high-humidity stress testing on laser diode chips to identify failure modes in light source for silicon photonics application.