Guan-Ting Chen, PhD

Guan-Ting Chen, PhD

Foundry and Subcon Engineer @ ams AG

About

Summary- 12+ years of III-V semiconductor engineer specializing in GaN/GaAs/InP epitaxy and MOCVD process development for advanced power and optoelectronic devices. Strong experience in MOCVD development and production optimization, supported by a deep understanding of MOCVD behavior, manufacturing principals, and continuously improvement. Skilled in process troubleshooting, new process introduction, and technical documentation to support manufacturing teams, and adept at mentoring engineers and technicians to improve team capabilities. Demonstrated ability to collaborate across cross-functional teams, ensuring stable, scalable, and high-yield epitaxy processes for advanced optoelectronic and photonic devices. Core Expertise / Technical Matrix- ‧      Epitaxy & Materials: GaN based, GaAs based, InP based, Concentration/Doing control engineering, Heterostructure engineering, Strain engineering, Defect reduction engineering‧      MOCVD Platform Expertise: Aixtron(G4/G5, CCS), Veeco(TurboDisc, Propel)‧      MOCVD Process Development: Recipe optimization, Reactor behavior analysis, Compositions modulation, Doping profile control, Regrowth/Butt-Joint technique‧      Device Structure: GaN-based LED/HEMT, GaAs VCSEL, InP Lasers‧      Metrology & Characterization: XRD, PLM, Rs mapping, wafer bow, Hall, ECV, AFM/SEM/TEM, SIMS‧      Manufacturing & Quality: NPI to production, PFMEA/EFMEA, Supplier quality, Yield improvement

Country

-

City

Taiwan

Industry

Semiconductors

Skill

Lean Process Improvement, Yield Enhancement, Reliability, R&D, MOCVD, Semiconductors, Semiconductor Industry, Compound Semiconductors, LED lighting systems, Metrology, Laser Diodes, Solid State Lighting, Electronics, Electrical Engineering, Materials Science, Sensors, Design of Experiments, Inspection, Optical Devices, Data Analysis

Experience

ams AG

Foundry and Subcon Engineer

ams AG

LinkedIn
2019-3 - 2022-8 · 3 yrs 6 mos

Taiwan

‧ Benchmark process quality&capability and push CIP with PDCA implementation.. ‧ Involve in APQP team to drive NPI to production. ‧ Drive CC/RMA and implement the corrective/prevention actions in time. ‧ Drive 8D/FA report to improve quality tasks. ‧ Discover device weakness and split DOE to evaluate new process technology. ‧ Build defect categories affected to product yield and reliability. ‧ Setup procedure BKM and yield limit: - Review supplier’s IQC/IPQC/OQC and yield limit. - Judge defect type and make defect categories for product. - Review and improve supplier’s AOI recipe and OQC criteria. ‧ Internal trained for course of supplier lean management and quality engineer ‧ Audit supplier’s production and quality system to meet VDA6.3.

TrueLight Corp

Senior System Engineer in Principal and Architecture

TrueLight Corp

LinkedIn
2016-8 - 2019-2 · 2 yrs 7 mos

Hsinchu City, Taiwan

‧ Construct a production line of GaN/InP/GaAs MOCVD, epitaxial structure and inspection tools. ‧ Study of GaN-based HEMT epitaxial structure to improve high power performance ‧ Support the development and construction of MOCVD technology: GaAs based VCSEL, InP-based 1300 nm FP/DFB LD. ‧ Surface quality improving of InP re-growth for DFB LD. ‧ Al0.15GaAs/Al0.9GaAs DBR growth control such as Al% composition and doping modulation. ‧ FMEA construction of MOCVD process.

Source Photonics

Epitaxy Section Manager

Source Photonics

LinkedIn
2014-8 - 2016-8 · 2 yrs 1 mo

Hsinchu City, Taiwan

- Develop epitaxy production technology for 2.5G/10G InP based DFB LD and 25G EML(Doping and regrowth control). - Sustaining improvement of MSA/GRR of inspection system(ECV, PLM, XRD). - Responsible for installation and qualification of Aixtron MOCVD(InP/GaAs CCS 6x2"). - Manage team (LEAN) to up 30% yield and 1.5x throughput for InP epi-wafer demand.

Veeco

Staff Research Scientist

Veeco

LinkedIn
2012-3 - 2014-7 · 2 yrs 5 mos

Hsinchu, Taiwan

-Demonstrated MOCVD technique of GaN based materials by using Veeco TurboDisc MOCVD ->Set up 6um-thick crack-free GaN on 6" Si ->Set up GaN HB-LED structure on 6" Si, Po>500mW@45mil ->Set up GaN HEMT structure on 6" Si , Soft Vbr>200V, Mobility>1800cm^2/V.s -Customer support: In-lab support for tsmc, on-site support for Epistar, and perform demonstration oversea -Lecturer of training course for National Central University, Taiwan

Education

National Central University

National Central University

LinkedIn

Electrical and Electronics Engineering

2001 - 2008 · 7 yrs
National Central University

National Central University

LinkedIn

Electrical and Electronics Engineering

1999 - 2001 · 2 yrs

Guan-Ting Chen, PhD's Contact Information

Email

******@***.com

Phone

(**) *** ****

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