Chandra Prakash Singh

Design, fabrication, and characterization of GaN/InGaN-based green micro-LEDs at IIT Bombay (IITBNF), integrating advanced cleanroom processing with physics-based modeling and machine learning-driven optimization. Executed full fabrication flow including solvent-based wafer cleaning (sonication: TCE/Acetone/IPA), SiO₂ hard mask engineering (PECVD/ICP-CVD), high-resolution lithography (UV and VOYAGER EBL), and anisotropic ICP-RIE mesa etching (Cl₂/BCl₃/Ar) for precise MQW-to-n-GaN pattern transfer. Developed and implemented sidewall damage mitigation strategies using TMAH wet treatment and dielectric passivation (ALD-Al₂O₃/PECVD-SiO₂/SiNx), targeting suppression of plasma-induced defects, surface band bending, and SRH recombination. Completed full device integration, including n-ohmic contacts (Ti/Al/Ni/Au with RTA), ITO current spreading layer, p-contact metallization (Ni/Au), and pad routing with dielectric isolation. Combined fabrication insights with advanced simulation frameworks (self-consistent Schrödinger–Poisson, drift–diffusion, and Localization Landscape theory) to analyze carrier transport, quantum confinement, and recombination dynamics. Leveraged machine learning models (RF, XGBoost, KNN) for epitaxial and structural optimization, enabling predictive design of high-efficiency micro-LED architectures. Performed comprehensive electrical and optical characterization (I–V, C–V, EL, PL), establishing quantitative correlations between epitaxial design, fabrication-induced damage, and performance metrics such as IQE, efficiency droop, leakage currents, and spectral stability. Designed comparative studies (control vs. TMAH-treated vs. passivated structures) to systematically evaluate sidewall effects in micro-scale LEDs.

Currently working in III-Nitride based Optoelectronic Devices.