Alan Howsare

Oversee device/process integration and yield engineering across a diverse range of product lines, including GaN HEMT, GaAs pHEMT and MESFET, Si trench MOSFET and BJT, Si and GaAs PIN and Schottky diode, and InP laser devices. Lead a team of 20-25 engineers supporting >$200M annual revenue.

Led a mixed team covering process integration of GaN HEMT technologies and fab-wide process engineering.

Responsible for staffing, budget, and oversight of a group of 15 direct reports covering wafer fabrication, process development, and epitaxial materials.

Technical lead for two emerging gallium nitride fabrication processes. Responsible for process maturation, product line transition-to-production, yield analysis and improvement, and supervision of internally funded R&D programs for performance and capability enhancement.

Production process lead for Wet Etch/Plating (Mar 2015-Sep 2015) and Plasma Etch (Sep 2015-Mar 2017) workcenters. Oversaw daily statistical process control, process improvement efforts, new tool qualification, and overall strategic direction of production process workcenters.

Developed processes for fabrication of gallium arsenide and gallium nitride semiconductor devices and circuits. Focus areas included interconnect metal plating, ohmic contact regrowth, and heterogeneous integration of III-V and silicon devices.